Researchers at the University of Arizona, together with international partners, have built what may be the fastest transistor ever. By harnessing laser pulses and graphene, this new device is set to redefine computing speeds for industries ranging from AI to medical technology. The team achieved incredible processing speeds—petahertz levels—by using laser pulses that last only 638 attoseconds, a duration so brief it measures in quintillionths of a second.
The secret lies in leveraging quantum tunnelling, where electrons pass through barriers that would normally stop them. In this case, a silicon layer was paired with graphene to precisely control electron movement. This method lets researchers track a single electron as it tunnels, a feat that takes traditional chips millions of times longer to match. Mohammed Hassan, an associate professor of physics and optical sciences, summed it up well when he remarked on the unexpected beauty of these tiny insights that push science forward.
What’s particularly exciting is that this transistor operates under normal room conditions, making it a strong candidate for commercial applications. With support from Tech Launch Arizona to secure patents and move toward a microchip realisation, industries might soon see petahertz-speed performance on everyday devices. The study, published in Nature Communications, gives us a glimpse into a future where quantum advances power our next generation of technology.
