Imagine a breakthrough that makes powering next‑gen 6G mobile networks feel within reach. Researchers at Imec have introduced a GaN-on‑Si MOSHEMT transistor that not only boosts efficiency but also delivers impressive performance. This device, operating at a low supply voltage, has achieved a record‑low contact resistance of 0.024Ω·mm—a milestone that sets the stage for more powerful amplification.
As you know, current mobile networks rely on frequencies below 6GHz, whereas upcoming 6G demands will stretch these limits. Traditional technologies like GaAs HBTs tend to falter above 15GHz. Here, GaN’s superior power density comes into its own. Imec’s transistor, delivering 27.8dBm (or 1W/mm) output power and 66% power‑added efficiency at 13GHz with a 5V supply, clearly shows the promise of this approach.
The innovation rests on a customised gate recess technique combined with an InAlN barrier layer, which helps counter the usual efficiency drops seen in enhancement‑mode designs. Moreover, by using a regrown n+(In)GaN layer, the team successfully minimised the contact resistance—a tweak that simulations suggest could boost output power density by as much as 70%. As Alireza Alian, Principal Member of Technical Staff at Imec, observes, reducing contact resistance is crucial for pushing output power while keeping efficiency high.
Looking ahead, the next phase is to integrate these advancements into the transistor architecture and validate them in realistic 6G scenarios. If you’ve ever struggled to balance performance and efficiency in mobile technology, this development offers a tangible step toward solving that challenge.
