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Japanese Researchers Pioneer Silicon-Free Transistors with Enhanced Electron Mobility

At the University of Tokyo’s Institute of Industrial Science, a group of researchers has taken a significant step forward by developing transistors that don’t rely on silicon. By blending gallium with indium oxide, they’ve created a material that allows electrons to move more freely. This innovation could help overcome the challenges faced as devices get […]

6 Jun 2025 · 2 MIN READRead article →
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